OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- RS Stock No.:
- 848-6294
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- PIN-UV-100DQC
- ผู้ผลิต:
- OSI Optoelectronics
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ยอดรวมย่อย (1 ชิ้น)*
THB10,159.49
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB10,870.65
(รวมภาษีมูลค่าเพิ่ม)
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ชิ้น | ต่อหน่วย |
|---|---|
| 1 + | THB10,159.49 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 848-6294
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- PIN-UV-100DQC
- ผู้ผลิต:
- OSI Optoelectronics
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | OSI Optoelectronics | |
| Spectrums Detected | Ultraviolet | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 980nm | |
| Package Type | Ceramic package | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 190nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Height | 2.03mm | |
| Width | 14.99mm | |
| Length | 16.51mm | |
| Angle of Half Sensitivity | 65 ° | |
| Polarity | Reverse | |
| Automotive Standard | No | |
| Typical Rise Time | 0.6ns | |
| Breakdown Voltage | 30V | |
| Dark Current | 0.2nA | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic package | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Height 2.03mm | ||
Width 14.99mm | ||
Length 16.51mm | ||
Angle of Half Sensitivity 65 ° | ||
Polarity Reverse | ||
Automotive Standard No | ||
Typical Rise Time 0.6ns | ||
Breakdown Voltage 30V | ||
Dark Current 0.2nA | ||
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response