SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
- RS Stock No.:
- 915-8830P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ดู MOSFETs ทั้งหมด
200 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (Supplied in a Tube)
THB512.22
(exc. VAT)
THB548.08
(inc. VAT)
| Units | Per unit |
| 13 - 24 | THB512.22 |
| 25 + | THB504.33 |
ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
- RS Stock No.:
- 915-8830P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +25 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.23mm |
| Typical Gate Charge @ Vgs | 30 nC @ 15 V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
| Width | 10.99mm |
| Forward Diode Voltage | 4.4V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |