Infineon Single OptiMOS 2 1 Type N, Type N-Channel MOSFET, 100 A, 20 V Enhancement, 8-Pin TDSON BSC026N02KSGAUMA1
- RS Stock No.:
- 911-4846
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSC026N02KSGAUMA1
- ผู้ผลิต:
- Infineon
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ยอดรวมย่อย (1 รีล รีลละ 5000 ชิ้น)*
THB151,180.00
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB161,765.00
(รวมภาษีมูลค่าเพิ่ม)
ชิ้น | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 5000 - 5000 | THB30.236 | THB151,180.00 |
| 10000 - 15000 | THB29.329 | THB146,645.00 |
| 20000 + | THB28.449 | THB142,245.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 911-4846
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSC026N02KSGAUMA1
- ผู้ผลิต:
- Infineon
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 1.1mm | |
| Width | 5.35mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 1.1mm | ||
Width 5.35mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Infineon OptiMOS™2 Power MOSFET Family
MOSFET Transistors, Infineon
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