N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 Nexperia PMV16XNR
- RS Stock No.:
- 170-4851
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- PMV16XNR
- ผู้ผลิต / Manufacturer:
- Nexperia
19000 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (On a Reel of 3000)
THB6.202
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB6.636
(รวมภาษีมูลค่าเพิ่ม)
Units | ต่อหน่วย | ต่อม้วน* |
|---|---|---|
| 3000 - 3000 | THB6.202 | THB18,606.00 |
| 6000 - 9000 | THB6.016 | THB18,048.00 |
| 12000 + | THB5.836 | THB17,508.00 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 170-4851
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- PMV16XNR
- ผู้ผลิต / Manufacturer:
- Nexperia
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8.6 A |
| Maximum Drain Source Voltage | 20 V |
| Series | PMV16XN |
| Package Type | TO-236 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 6.94 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 12 V |
| Width | 1.4mm |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 13.4 nC @ 4.5 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |