Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC

RS Stock No.:: 168-7928
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7240TRPBF
ผู้ผลิต:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 10.5 A, 40 V Enhancement, 8-Pin SOIC

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ยอดรวมย่อย (1 รีล รีลละ 4000 ชิ้น)*

THB95,356.00

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB102,032.00

(รวมภาษีมูลค่าเพิ่ม)

ส่งฟรีหากซื้อเกิน ฿2,500.00

สต็อกสุดท้ายของ RS

4,000 ชิ้นสุดท้ายพร้อมจัดส่งจากคลังสินค้าต่างประเทศ

ชิ้น	ต่อหน่วย	ต่อม้วน*
4000 - 4000	THB23.839	THB95,356.00
8000 - 12000	THB23.124	THB92,496.00
16000 +	THB22.43	THB89,720.00

*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 168-7928
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7240TRPBF
ผู้ผลิต:: Infineon

คุณสมบัติ / Specifications

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

รายละเอียดสินค้า / Product Details

ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ

เลือกทั้งหมด	คุณลักษณะ	ค่า
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.5A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	73nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Automotive Standard	No

	เลือกทั้งหมด
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.5A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 73nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 10.5A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF7240TRPBF

This P-Channel MOSFET excels in power management solutions. With a maximum continuous drain current of 10.5A and a drain-source voltage capability of 40V, it is designed for surface mounting in a Compact SOIC package. Measuring 5mm in length, 4mm in width and 1.5mm in height, it is suitable for various electronic applications including battery management systems.

Features & Benefits

• Supports high current loads up to 10.5A, Ideal for demanding tasks

• Operates effectively in enhancement mode for improved control

• Designed for thermal performance with a customised leadframe

• Suitable for multiple applications, saving on board space

• Compatible with standard soldering processes such as infrared and wave

Applications

• Utilised in battery management systems for monitoring performance

• Used in load management circuits requiring efficient power manipulation

• Suitable for automotive where space and efficiency are critical

• Integrated in power supplies for reliable load handling

What are the key thermal characteristics of this device?

The device features enhanced thermal characteristics due to its customised leadframe design, enabling it to operate comfortably within a junction temperature range of -55°C to +150°C.

How does the on-resistance impact overall performance?

With an exceptionally low Rds(on) of just 25mΩ, this MOSFET significantly reduces power losses during operation, enhancing the efficiency of power circuits and improving heat dissipation.

Can it be used in high-frequency applications?

Yes, the device's parameters, such as the typical gate charge of 73 nC at 10 V, allow for effective operation in high-frequency applications, making it suitable for various electronic devices.

What should be considered for optimal use in circuits?

It's essential to ensure that the gate-source voltage remains within the maximum limits of ±20V to prevent damage, thereby maintaining device reliability and performance in the application.