N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXYS IXFK64N50Q3
- RS Stock No.:
- 168-4706
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFK64N50Q3
- ผู้ผลิต / Manufacturer:
- IXYS
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 06/11/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 25)
THB977.661
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,046.097
(รวมภาษีมูลค่าเพิ่ม)
Units | ต่อหน่วย | Per Tube* |
|---|---|---|
| 25 - 25 | THB977.661 | THB24,441.525 |
| 50 - 75 | THB956.408 | THB23,910.20 |
| 100 + | THB935.155 | THB23,378.875 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 168-4706
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFK64N50Q3
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 64 A |
| Maximum Drain Source Voltage | 500 V |
| Series | HiperFET, Q3-Class |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 85 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 1 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Width | 5.13mm |
| Typical Gate Charge @ Vgs | 145 nC @ 10 V |
| Transistor Material | Si |
| Length | 19.96mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 26.16mm |