- RS Stock No.:
- 168-4770
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXYX100N120B3
- ผู้ผลิต / Manufacturer:
- IXYS
22 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB1,113.614
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB1,191.567
(รวมภาษีมูลค่าเพิ่ม)
Units | ต่อหน่วย | Per Tube* |
---|---|---|
30 - 30 | THB1,113.614 | THB33,408.42 |
60 - 90 | THB1,089.405 | THB32,682.15 |
120 + | THB1,065.196 | THB31,955.88 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 168-4770
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXYX100N120B3
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 225 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1150 W |
Package Type | PLUS247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 30kHz |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.34mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |