Ruland Disc, 25.4mm Outside Diameter, 6/5.5 mm, 8/7.5 mm Bore, 34.9mm Length Flexible Coupling

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

The Ruland D-Bore double disc coupling is a lightweight and has low inertia which making it well suited for applications with speeds up to 10,000 RPM. The D-bore allows for positive drive in applications where the coupling can not slip. The double disc design is comprised of two anodized aluminium hubs, two sets of thin stainless steel disc springs, and a centre spacer allowing each disc to bend individually and accommodate all types of misalignment.

Balanced design
RoHS3 and REACH compliant
Hardware is metric and tests beyond DIN 912 12.9 standards
Zero backlash and balanced design for reduced vibration at high speeds
Machined from solid bar stock that is sourced exclusively from North American mills

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.