Infineon SRAM, CY7C1049GN-10VXI- 4 MB
- RS Stock No.:
- 182-3295
- Mfr. Part No.:
- CY7C1049GN-10VXI
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 19 units)*
THB4,410.983
(exc. VAT)
THB4,719.752
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
หมดสต็อกชั่วคราว
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Units | Per unit | Per Tube* |
|---|---|---|
| 19 - 19 | THB232.157 | THB4,410.98 |
| 38 - 57 | THB227.049 | THB4,313.93 |
| 76 + | THB222.174 | THB4,221.31 |
*price indicative
- RS Stock No.:
- 182-3295
- Mfr. Part No.:
- CY7C1049GN-10VXI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Organisation | 512k x 16 Bit | |
| Number of Words | 512K | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 10ns | |
| Timing Type | Asynchronous | |
| Mount Type | Surface | |
| Package Type | SOJ | |
| Pin Count | 36 | |
| Length | 0.93mm | |
| Standards/Approvals | RoHS | |
| Height | 0.12mm | |
| Width | 0.4 mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Organisation 512k x 16 Bit | ||
Number of Words 512K | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 10ns | ||
Timing Type Asynchronous | ||
Mount Type Surface | ||
Package Type SOJ | ||
Pin Count 36 | ||
Length 0.93mm | ||
Standards/Approvals RoHS | ||
Height 0.12mm | ||
Width 0.4 mm | ||
- COO (Country of Origin):
- US
CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.
High speed
tAA = 10 ns
Low Active and standby currents
Active current: ICC = 38 mA typical
Standby current: ISB2 = 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
TTL-compatible inputs and outputs
Pb-free 36-pin SOJ and 44-pin TSOP II packages
Related links
- Infineon SRAM Memory Chip, CY7C1049GN-10VXI- 4Mbit
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- Infineon SRAM Memory Chip, CY7C1041GN-10ZSXI- 4Mbit
- Cypress Semiconductor SRAM Memory Chip, CY7C1041G30-10VXI- 4Mbit
- Infineon SRAM Memory Chip, CY7C1041G30-10ZSXE- 4Mbit
- Infineon SRAM, CY7C1049G30-10VXI- 4Mbit
