Infineon 1Mbit 25ns NVRAM, 16-Pin SOIC, CY14V101Q3-SFXI
- RS Stock No.:
- 194-9094P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CY14V101Q3-SFXI
- ผู้ผลิต:
- Infineon
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- RS Stock No.:
- 194-9094P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CY14V101Q3-SFXI
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 25ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 16 | |
| Dimensions | 10.49 x 7.59 x 2.36mm | |
| Length | 10.49mm | |
| Width | 7.59mm | |
| Height | 2.36mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 3 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 128K | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 25ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Length 10.49mm | ||
Width 7.59mm | ||
Height 2.36mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 3 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 128K | ||
The Cypress CY14V101Q3 combines a 1 Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cell provides highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). Both STORE and RECALL operations can also be initiated by the user through SPI Instruction.
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