ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A, 32V, HTSOP-J8

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications
Under Voltage Lockout (UVLO) for high-side and low-side driver
3.3 V and 5.0 V interface voltage
Output In-phase with input signal

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