Infineon MOSFET Gate Driver, 290 mA 8-Pin 20 V, SOIC
- RS Stock No.:
- 226-6193
- Mfr. Part No.:
- IRS2118STRPBF
- Brand:
- Infineon
Image representative of range
Subtotal (1 reel of 2500 units)*
THB77,640.00
(exc. VAT)
THB83,075.00
(inc. VAT)
ส่งฟรีหากซื้อเกิน ฿2,500.00
ไม่สามารถเข้าถึงข้อมูลสต็อกได้ในขณะนี้
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | THB31.056 | THB77,640.00 |
*price indicative
- RS Stock No.:
- 226-6193
- Mfr. Part No.:
- IRS2118STRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 65ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 75ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | IRS | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 65ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 75ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series IRS | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.
Gate drive supply range from 10 V to 20V
Undervoltage lockout
CMOS Schmitt-triggered inputs with pull-down
Output in phase with input
Related links
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