Infineon 256kbit SPI FRAM Memory 8-Pin DFN, FM25V02A-DG
- RS Stock No.:
- 124-2986P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FM25V02A-DG
- ผู้ผลิต:
- Infineon
มีส่วนลดเมื่อซื้อจำนวนมาก
ยอดรวมย่อย 20 ชิ้น (จัดส่งในหลอด)*
THB4,614.80
(ไม่รวมภาษีมูลค่าเพิ่ม)
THB4,937.80
(รวมภาษีมูลค่าเพิ่ม)
ส่งฟรีหากซื้อเกิน ฿2,500.00
หมดสต็อกชั่วคราว
- จะส่งได้หลังจากวันที่ 26 มกราคม 2570 ไปอีกประมาณ 7 วันทำการ
ต้องการสินค้าเพิ่มหรือไม่ ระบุจำนวนและคลิก ‘ตรวจสอบวันจัดส่ง’ เพื่อดูข้อมูลเพิ่มเติมเกี่ยวกับสต็อกสินค้าและการจัดส่ง
ชิ้น | ต่อหน่วย |
|---|---|
| 20 - 38 | THB230.74 |
| 40 + | THB227.19 |
*ตัวบ่งบอกราคา / price indicative
- RS Stock No.:
- 124-2986P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FM25V02A-DG
- ผู้ผลิต:
- Infineon
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Dimensions | 4 x 4.5 x 0.7mm | |
| Length | 4.5mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 4mm | |
| Height | 0.7mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Number of Words | 32K | |
| Minimum Operating Supply Voltage | 2 V | |
| Minimum Operating Temperature | -40 °C | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type DFN | ||
Pin Count 8 | ||
Dimensions 4 x 4.5 x 0.7mm | ||
Length 4.5mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 4mm | ||
Height 0.7mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Number of Words 32K | ||
Minimum Operating Supply Voltage 2 V | ||
Minimum Operating Temperature -40 °C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM)
Logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
Logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.