N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
- RS Stock No.:
- 920-0987
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFB210N30P3
- ผู้ผลิต / Manufacturer:
- IXYS
50 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 25)
THB999.925
(exc. VAT)
THB1,069.92
(inc. VAT)
| Units | Per unit | Per Tube* |
| 25 - 25 | THB999.925 | THB24,998.125 |
| 50 - 75 | THB978.188 | THB24,454.70 |
| 100 + | THB956.45 | THB23,911.25 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 920-0987
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFB210N30P3
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 210 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar3 |
| Package Type | PLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.89 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 20.29mm |
| Width | 5.31mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 26.59mm |