N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXYS IXFH26N60P
- RS Stock No.:
- 920-0760
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFH26N60P
- ผู้ผลิต / Manufacturer:
- IXYS
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 27/12/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB243.808
(exc. VAT)
THB260.875
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | THB243.808 | THB7,314.24 |
| 60 - 90 | THB238.507 | THB7,155.21 |
| 120 + | THB233.207 | THB6,996.21 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 920-0760
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFH26N60P
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 270 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 460 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Length | 16.26mm |
| Width | 5.3mm |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |