Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
- RS Stock No.:
- 916-3888
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS020M12CM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ดู MOSFETs ทั้งหมด
- RS Stock No.:
- 916-3888
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS020M12CM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | Module |
| Mounting Type | Screw Mount |
| Pin Count | 28 |
| Maximum Drain Source Resistance | 208 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.7V |
| Maximum Power Dissipation | 167 W |
| Transistor Configuration | 3 Phase |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 61.5 nC @ 20 V, 61.5 nC @ 5 V |
| Length | 108mm |
| Maximum Operating Temperature | +150 °C |
| Width | 47mm |
| Number of Elements per Chip | 6 |
| Minimum Operating Temperature | -40 °C |
| Height | 17mm |
| Forward Diode Voltage | 2.3V |