N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707TRPBF

RS Stock No.:: 915-4976P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF8707TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707TRPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (Supplied on a Reel)**. จำนวนต่ำกว่า 150 ชิ้นบนแถบต่อเนื่อง

THB14.448

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB15.459

(รวมภาษีมูลค่าเพิ่ม)

9080 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย
1000 - 1960	THB14.087
2000 +	THB13.87

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 915-4976P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF8707TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF8707TRPBF

This MOSFET is tailored for power applications, enhancing efficiency and thermal performance. Its low on-resistance and minimal gate charge significantly reduce both conduction and switching losses, making it well-suited for high-efficiency DC-DC converters across various applications. The compact SOIC package increases versatility and integrates easily into confined spaces.

Features & Benefits

• Low gate charge diminishes switching losses in applications
• Maximum continuous drain current of 11A boosts performance
• High temperature tolerance up to +150°C ensures reliability
• Low Rds(on) enhances overall power efficiency
• N-channel configuration allows flexible designs
• Fully characterised for avalanche voltage and current provides added security

Applications

• Control of MOSFETs in synchronous buck converters
• Use in isolated DC-DC converters for networking systems
• Power management solutions for notebook processors
• Implementation in automation and control systems for improved performance

What is the suitability for high-temperature environments?

The device operates effectively at temperatures up to +150°C, ensuring reliability in high-heat conditions typical of power applications.

How does this product manage power dissipation?

With a maximum power dissipation of 2.5W, it balances thermal performance, decreasing the risk of overheating.

Can it handle different voltage ratings?

Yes, it can withstand a maximum drain-source voltage of 30V, making it versatile for various applications.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 2.35V, ensuring compatibility with a range of drive circuits.

How does the low Rds(on) impact its performance?

The low drain-source on-resistance minimises conduction losses, enhancing efficiency and reducing heat generation during operation.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	17.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	4mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1V
Height	1.5mm