N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF
- RS Stock No.:
- 913-4032
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB3813PBF
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 24/05/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB45.91
(exc. VAT)
THB49.12
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB45.91 | THB2,295.50 |
| 100 - 150 | THB44.912 | THB2,245.60 |
| 200 + | THB43.913 | THB2,195.65 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 913-4032
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB3813PBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
รายละเอียดสินค้า / Product Details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 260 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.35V |
| Minimum Gate Threshold Voltage | 1.35V |
| Maximum Power Dissipation | 230 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.83mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 10.67mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 57 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Height | 9.02mm |