- RS Stock No.:
- 907-5205
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF7749L1TRPBF
- ผู้ผลิต / Manufacturer:
- Infineon
3988 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each: (In a Pack of 4)
THB168.335
(exc. VAT)
THB180.118
(inc. VAT)
Units | Per unit | Per Pack* |
4 - 996 | THB168.335 | THB673.34 |
1000 - 1996 | THB164.128 | THB656.512 |
2000 + | THB161.598 | THB646.392 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 907-5205
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF7749L1TRPBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 375 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DirectFET ISOMETRIC |
Series | DirectFET, HEXFET |
Mounting Type | Surface Mount |
Maximum Drain Source Resistance | 1.5 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 200 nC @ 10 V |
Length | 9.15mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 7.1mm |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
Height | 0.49mm |