N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK Infineon IRLR3105TRPBF

RS Stock No.:: 830-3360P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLR3105TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK Infineon IRLR3105TRPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (Supplied on a Reel)**. จำนวนต่ำกว่า 150 ชิ้นบนแถบต่อเนื่อง

THB32.627

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB34.911

(รวมภาษีมูลค่าเพิ่ม)

สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 30/05/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย
500 - 990	THB31.812
1000 +	THB31.323

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 830-3360P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRLR3105TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 25A Maximum Continuous Drain Current, 57W Maximum Power Dissipation - IRLR3105TRPBF

This MOSFET is intended for high-performance applications where electrical power control is critical. It provides efficient switching and effective thermal management, functioning within a wide temperature range, thus making it an advantageous choice for professionals in automation, electronics, and electrical sectors.

Features & Benefits

• Improves efficiency with low Rds(on) for reduced power loss
• Supports a maximum continuous drain current of 25A
• Allows dual gate-source voltage levels for added flexibility
• Maintains thermal stability with a maximum operating temperature of +175°C
• Compact DPAK TO-252 package ensures straightforward surface mounting
• Designed for rapid switching speeds for enhanced performance

Applications

• Controls motor drives in automation systems
• Utilised in power management circuits for energy efficiency
• Integrated into DC-DC converters for electronic devices
• Suitable for industrial equipment demanding high reliability
• Employed in battery management systems for optimal operation

What is the operating temperature range?

The operating temperature range is -55°C to +175°C, offering versatility across various environments.

How does it handle switching speed?

It is built for fast switching, ensuring high performance in applications necessitating quick on-off cycles.

What type of mounting does it support?

This device is designed for surface mount applications using vapour phase, infrared, or wave soldering techniques.

Can it be used in high-voltage applications?

Yes, it operates with a maximum drain-source voltage of 55V, making it apt for high-voltage circuits.

What considerations should be made for power dissipation?

Power dissipation can reach up to 57W, with a derating factor of 0.38W/°C to ensure safe operation in various thermal conditions.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	43 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	6.73mm
Typical Gate Charge @ Vgs	20 nC @ 5 V
Width	6.22mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	2.39mm