P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 Infineon BSP315PH6327XTSA1
- RS Stock No.:
- 826-9238
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSP315PH6327XTSA1
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 02/05/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each: (In a Pack of 50)
THB27.89
(exc. VAT)
THB29.84
(inc. VAT)
| Units | Per unit | Per Pack* |
| 50 - 200 | THB27.89 | THB1,394.50 |
| 250 - 450 | THB27.193 | THB1,359.65 |
| 500 + | THB26.775 | THB1,338.75 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 826-9238
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BSP315PH6327XTSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.17 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-223 |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V |
| Transistor Material | Si |
| Width | 3.5mm |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |