Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

RS Stock No.:: 826-8829
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7105TRPBF
ผู้ผลิต / Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

7220 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)

เพิ่ม / Added

ราคา / Price Each: (In a Pack of 20)

THB19.787

(exc. VAT)

THB21.172

(inc. VAT)

Units	Per unit	Per Pack*
20 - 980	THB19.787	THB395.74
1000 - 1980	THB19.293	THB385.86
2000 +	THB18.996	THB379.92
*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 826-8829
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRF7105TRPBF
ผู้ผลิต / Manufacturer:: Infineon

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

COO (Country of Origin):: CN

รายละเอียดสินค้า / Product Details

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ / Specifications

คุณสมบัติ	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	25 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	160 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Length	5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	10 nC @ 10 V, 9.4 nC @ 10 V
Width	4mm
Height	1.5mm
Minimum Operating Temperature	-55 °C