N-channel MOSFET,IRFP250N 30A 200V 214W
- RS Stock No.:
- 609-8867
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFP250NPBF
- ผู้ผลิต:
- International Rectifier
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- RS Stock No.:
- 609-8867
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFP250NPBF
- ผู้ผลิต:
- International Rectifier
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | International Rectifier | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Maximum Operating Temperature | +175 °C | |
| Series | HEXFET | |
| Typical Gate Charge @ Vgs | 123 nC @ 10 V | |
| Height | 20.3mm | |
| Transistor Material | Si | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand International Rectifier | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Width 5.3mm | ||
Length 15.9mm | ||
Maximum Operating Temperature +175 °C | ||
Series HEXFET | ||
Typical Gate Charge @ Vgs 123 nC @ 10 V | ||
Height 20.3mm | ||
Transistor Material Si | ||
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF
This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.
Features & Benefits
• Continuous drain current rating of 30A supports robust performance
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems
Applications
• Power supplies for industrial automation
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching
How does this MOSFET handle high temperatures?
With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.
What are the implications of the specified on-resistance?
A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.
Is this device suitable for pulsed applications?
Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.
How does it manage gate voltage during operation?
The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.
What is the significance of the avalanche ratings?
The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.