SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0032120K
- RS Stock No.:
- 192-3498
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0032120K
- ผู้ผลิต / Manufacturer:
- Wolfspeed
3 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB1,258.69
(exc. VAT)
THB1,346.80
(inc. VAT)
| Units | Per unit |
| 1 - 7 | THB1,258.69 |
| 8 - 14 | THB1,227.23 |
| 15 + | THB1,208.35 |
- RS Stock No.:
- 192-3498
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0032120K
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]
+15V gate drive voltage
Low-impedance package with Kelvin source pin
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
Fast intrinsic diode with low reverse recovery (QRR)
Easy to parallel and simple to drive
Applications
Solar and Energy Storage Systems
Electric Vehicle Charging
Uninterruptible Power Supply (UPS)
Motor Control and Drives
Switched-mode Power Supplies (SMPS)
+15V gate drive voltage
Low-impedance package with Kelvin source pin
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
Fast intrinsic diode with low reverse recovery (QRR)
Easy to parallel and simple to drive
Applications
Solar and Energy Storage Systems
Electric Vehicle Charging
Uninterruptible Power Supply (UPS)
Motor Control and Drives
Switched-mode Power Supplies (SMPS)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 63 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 283 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 118 nC @ 4/15V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | SiC |
| Length | 16.13mm |
| Height | 23.6mm |
| Minimum Operating Temperature | -40 °C |