SiC N-Channel MOSFET, 72 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M0045170D
- RS Stock No.:
- 192-3366
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0045170D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
360 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 30)
THB3,777.108
(exc. VAT)
THB4,041.506
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | THB3,777.108 | THB113,313.24 |
| 60 - 90 | THB3,663.795 | THB109,913.85 |
| 120 + | THB3,553.881 | THB106,616.43 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 192-3366
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0045170D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.
1700V of blocking voltage with low RDS(on)
High-speed switching with low capacitances
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low capacitances
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Voltage | 1700 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 45 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 520 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, 25 V |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 188 nC @ 5/20V |
| Length | 16.13mm |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
| Height | 21.1mm |