N-Channel MOSFET, 64.6 A, 150 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR622DP-T1-GE3

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TrenchFET® power MOSFET

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คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	64.6 A
Maximum Drain Source Voltage	150 V
Package Type	PowerPAK SO-8DC
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	27 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5.99mm
Number of Elements per Chip	1
Width	5mm
Minimum Operating Temperature	-55 °C
Height	1.07mm
Forward Diode Voltage	1.1V