P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH129DN-T1-GE3
- RS Stock No.:
- 178-3869
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SiSH129DN-T1-GE3
- ผู้ผลิต / Manufacturer:
- Vishay Siliconix
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 178-3869
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- SiSH129DN-T1-GE3
- ผู้ผลิต / Manufacturer:
- Vishay Siliconix
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
สถานะRoHS: ไม่สามารถใช้ได้
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
FEATURES
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
with small size
APPLICATIONS
Load switch
Adapter switch
Notebook PC
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
with small size
APPLICATIONS
Load switch
Adapter switch
Notebook PC
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 30 V |
| Series | TrenchFET |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.8V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 52.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Transistor Material | Si |
| Length | 3.15mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 47.5 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -50 °C |
| Height | 1.07mm |