N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.2mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)

• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC