- RS Stock No.:
- 170-2284
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD068N10N3GATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
20000 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (On a Reel of 2500)
THB44.801
(exc. VAT)
THB47.937
(inc. VAT)
Units | Per unit | Per Reel* |
2500 - 2500 | THB44.801 | THB112,002.50 |
5000 - 7500 | THB43.457 | THB108,642.50 |
10000 + | THB42.153 | THB105,382.50 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 170-2284
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPD068N10N3GATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
สถานะRoHS: ได้รับการยกเว้น
รายละเอียดสินค้า / Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon MOSFET
The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Easy to design products
• Environmentally friendly
• Excellent gate charge x R DS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Ideal for high frequency switching and synchronous rectification
• Increased efficiency
• Lead (Pb) free plating
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
• Environmentally friendly
• Excellent gate charge x R DS (on) product (FOM)
• Excellent switching performance
• Halogen free
• Highest power density
• Ideal for high frequency switching and synchronous rectification
• Increased efficiency
• Lead (Pb) free plating
• Less paralleling required
• Operating temperature ranges between -55°C and 175°C
• Smallest board space consumption
• Very low Qg and Qgd
• World's lowest RDS (on)
Applications
• Class D audio amplifiers
• Isolated DC-DC converters (telecommunication and data communication systems)
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
• Isolated DC-DC converters (telecommunication and data communication systems)
• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)
• O-ring switches and circuit breakers in 48V systems
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 100 V |
Package Type | DPAK (TO-252) |
Series | IPD068N10N3 G |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 12.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Typical Gate Charge @ Vgs | 51 nC @ 10 V |
Maximum Operating Temperature | +175 °C |
Width | 7.47mm |
Length | 6.73mm |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Height | 2.41mm |