N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220AB Infineon IRFB7430PBF
- RS Stock No.:
- 165-6715
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB7430PBF
- ผู้ผลิต / Manufacturer:
- Infineon
2150 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB86.085
(exc. VAT)
THB92.111
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB86.085 | THB4,304.25 |
| 100 - 150 | THB84.213 | THB4,210.65 |
| 200 + | THB82.342 | THB4,117.10 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 165-6715
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB7430PBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
รายละเอียดสินค้า / Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220AB |
| Series | StrongIRFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 460 nC @ 10 V |
| Width | 4.83mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 16.51mm |