Wolfspeed Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module CCS020M12CM2
- RS Stock No.:
- 162-9726
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS020M12CM2
- ผู้ผลิต:
- Wolfspeed
รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า
ไม่พร้อมจำหน่าย
RS จะไม่สต็อกสินค้านี้อีกต่อไป
- RS Stock No.:
- 162-9726
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS020M12CM2
- ผู้ผลิต:
- Wolfspeed
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | Module | |
| Mounting Type | Screw Mount | |
| Pin Count | 28 | |
| Maximum Drain Source Resistance | 208 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.7V | |
| Maximum Power Dissipation | 167 W | |
| Transistor Configuration | 3 Phase | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Number of Elements per Chip | 6 | |
| Length | 108mm | |
| Width | 47mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 61.5 nC @ 20 V, 61.5 nC @ 5 V | |
| Transistor Material | SiC | |
| Forward Diode Voltage | 2.3V | |
| Minimum Operating Temperature | -40 °C | |
| Height | 17mm | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Module | ||
Mounting Type Screw Mount | ||
Pin Count 28 | ||
Maximum Drain Source Resistance 208 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.7V | ||
Maximum Power Dissipation 167 W | ||
Transistor Configuration 3 Phase | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Number of Elements per Chip 6 | ||
Length 108mm | ||
Width 47mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 61.5 nC @ 20 V, 61.5 nC @ 5 V | ||
Transistor Material SiC | ||
Forward Diode Voltage 2.3V | ||
Minimum Operating Temperature -40 °C | ||
Height 17mm | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Wolfspeed
