Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2

RS Stock No.:: 162-9720
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: CAS120M12BM2
ผู้ผลิต / Manufacturer:: Wolfspeed

Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

30 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)

เพิ่ม / Added

ราคา / Price Each (In a Box of 10)

THB19,767.815

(exc. VAT)

THB21,151.562

(inc. VAT)

Units	Per unit	Per Box*
10 - 10	THB19,767.815	THB197,678.15
20 - 30	THB19,174.782	THB191,747.82
40 +	THB18,599.539	THB185,995.39
*ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 162-9720
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: CAS120M12BM2
ผู้ผลิต / Manufacturer:: Wolfspeed

ข้อมูลทางเทคนิค / Technical Data Sheets

Legislation and Compliance

COO (Country of Origin):: CN

รายละเอียดสินค้า / Product Details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

คุณสมบัติ / Specifications

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	193 A
Maximum Drain Source Voltage	1200 V
Package Type	Half Bridge
Mounting Type	Screw Mount
Pin Count	7
Maximum Drain Source Resistance	30 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.6V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	925 W
Transistor Configuration	Series
Maximum Gate Source Voltage	-10 V, +25 V
Width	61.4mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	378 nC @ 20 V
Maximum Operating Temperature	+150 °C
Transistor Material	SiC
Length	106.4mm
Minimum Operating Temperature	-40 °C
Forward Diode Voltage	2.4V
Height	30mm