- RS Stock No.:
- 162-9713
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
200 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB478.995
(exc. VAT)
THB512.525
(inc. VAT)
Units | Per unit | Per Tube* |
50 - 50 | THB478.995 | THB23,949.75 |
100 - 150 | THB464.625 | THB23,231.25 |
200 + | THB450.686 | THB22,534.30 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 162-9713
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 900 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 78 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.1V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +25 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 30 nC @ 15 V |
Transistor Material | SiC |
Width | 10.99mm |
Length | 10.23mm |
Forward Diode Voltage | 4.4V |
Height | 4.57mm |
Minimum Operating Temperature | -55 °C |