N-Channel MOSFET, 110 A, 100 V, 8-Pin VSONP Texas Instruments CSD19531Q5AT
- RS Stock No.:
- 162-8145
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CSD19531Q5AT
- ผู้ผลิต / Manufacturer:
- Texas Instruments
1000 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (On a Reel of 250)
THB52.177
(exc. VAT)
THB55.829
(inc. VAT)
| Units | Per unit | Per Reel* |
| 250 - 250 | THB52.177 | THB13,044.25 |
| 500 - 750 | THB51.043 | THB12,760.75 |
| 1000 + | THB49.909 | THB12,477.25 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 162-8145
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CSD19531Q5AT
- ผู้ผลิต / Manufacturer:
- Texas Instruments
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
รายละเอียดสินค้า / Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 100 V |
| Series | NexFET |
| Package Type | VSONP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 7.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.3V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 5mm |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 6.1mm |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |