N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRFB4020PBF
- RS Stock No.:
- 145-8608
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB4020PBF
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 05/12/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB49.67
(exc. VAT)
THB53.15
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB49.67 | THB2,483.50 |
| 100 - 150 | THB48.59 | THB2,429.50 |
| 200 + | THB47.51 | THB2,375.50 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 145-8608
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFB4020PBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.9V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 100 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.66mm |
| Width | 4.82mm |
| Number of Elements per Chip | 1 |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |