N-Channel MOSFET, 71 A, 60 V, 3-Pin DPAK Infineon IRFR7546TRPBF

RS Stock No.:: 130-0990P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFR7546TRPBF
ผู้ผลิต / Manufacturer:: Infineon

N-Channel MOSFET, 71 A, 60 V, 3-Pin DPAK Infineon IRFR7546TRPBF

รูปภาพประกอบสินค้าเป็นเพียงรูปภาพใกล้เคียงเท่านั้น กรุณาอ่านรายละเอียดสินค้า

มีส่วนลดเมื่อซื้อจำนวนมาก

ราคา / Price Each (Supplied on a Reel)**. จำนวนต่ำกว่า 150 ชิ้นบนแถบต่อเนื่อง

THB19.865

(ไม่รวมภาษีมูลค่าเพิ่ม)

THB21.256

(รวมภาษีมูลค่าเพิ่ม)

10560 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)*

* วันที่จัดส่งอาจเปลี่ยนแปลงได้ตามจำนวนสินค้าที่คุณเลือกหรือที่อยู่จัดส่งของคุณ

ฟรี ค่าจัดส่งสำหรับการสั่งซื้อมากกว่า THB3,500.00 (ไม่รวมภาษี)

ชิ้น	ต่อหน่วย
500 - 990	THB19.368
1000 +	THB19.07

**ตัวบ่งบอกราคา / price indicative

RS Stock No.:: 130-0990P
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:: IRFR7546TRPBF
ผู้ผลิต / Manufacturer:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF

This high-performance MOSFET is engineered for various applications that require efficient power management. With robust specifications, it is well-suited for scenarios demanding durability and highcurrent capabilities. It is commonly used in automation and electrical applications, showcasing exceptional performance characteristics across different environments.

Features & Benefits

• Maximum continuous drain current of 71A
• Rated for a maximum drain-source voltage of 60V
• Low on-resistance enhances efficiency in power delivery
• DPAK package designed for ease of surface mounting
• High power dissipation capability improves thermal management
• Enhancement mode operation optimises switching performance

Applications

• Suitable for brushed motor drive
• Useful in battery-powered circuit designs
• Employed in half-bridge and full-bridge topologies
• Effective in synchronous rectifier
• Applied in DC/DC and AC/DC power conversion systems

What is the thermal specification for continuous operation?

It supports a maximum power dissipation of 99W, ensuring efficient operation without overheating under suitable conditions.

How does it perform in high-temperature environments?

The device operates efficiently up to a maximum junction temperature of +175°C, making it applicable in challenging situations.

What mounting options are available for installation?

It features a surface mount design in a DPAK package, allowing for straightforward integration onto PCBs while saving space.

Is there a limitation on the gate voltage?

Yes, the gate-to-source voltage must not exceed ±20V to ensure safe operating conditions.

What measures enhance its reliability during operation?

Ruggedness is improved through avalanche and dynamic dV/dt protection features, ensuring dependable performance in various conditions.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	71 A
Maximum Drain Source Voltage	60 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	99 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	58 nC @ 20 V
Width	2.39mm
Length	6.73mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Forward Diode Voltage	1.2V
Height	6.22mm
Minimum Operating Temperature	-55 °C