Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- RS Stock No.:
- 253-3506
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BIDW30N60T
- ผู้ผลิต / Manufacturer:
- Bourns
1200 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 600)
THB94.019
(exc. VAT)
THB100.60
(inc. VAT)
| Units | Per unit | Per Tube* |
| 600 + | THB94.019 | THB56,411.40 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 253-3506
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BIDW30N60T
- ผู้ผลิต / Manufacturer:
- Bourns
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 230 W |
| Configuration | Single Diode |
| Package Type | TO-247 |