onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 124-5387
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NGTB40N120FL2WG
- ผู้ผลิต / Manufacturer:
- ON Semiconductor
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 124-5387
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NGTB40N120FL2WG
- ผู้ผลิต / Manufacturer:
- ON Semiconductor
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 535 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.25 x 5.3 x 21.4mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |