Cypress Semiconductor, FM16W08-SG

  • RS Stock No. 188-5392
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. FM16W08-SG
  • ผู้ผลิต / Manufacturer Cypress Semiconductor
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
รายละเอียดสินค้า / Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
SRAM and EEPROM compatible
Industry-standard 8 K ´ 8 SRAM and EEPROM pinout
70-ns access time, 130-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 12 mA (max)
Standby current 20 μA (typ)
Wide voltage operation: VDD = 2.7 V to 5.5 V
Industrial temperature: –40 °C to +85 °C
28-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Memory Size 64kbit
Organisation 8k x 8 bit
Interface Type Parallel
Data Bus Width 8bit
Maximum Random Access Time 70ns
Mounting Type Surface Mount
Package Type SOIC
Pin Count 28
Dimensions 18.11 x 7.62 x 2.37mm
Length 18.11mm
Width 7.62mm
Maximum Operating Supply Voltage 5.5 V
Height 2.37mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
Number of Words 8k
Automotive Standard AEC-Q100
243 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 27)
THB 315.14
(exc. VAT)
THB 337.20
(inc. VAT)
Units
Per unit
Per Tube*
27 - 27
THB315.14
THB8,508.78
54 - 81
THB311.388
THB8,407.476
108 - 243
THB277.617
THB7,495.659
270 - 486
THB263.867
THB7,124.409
513 +
THB260.946
THB7,045.542
*ตัวบ่งบอกราคา / price indicative
Related Products
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...