Cypress Semiconductor NOR 512Mbit CFI Flash Memory 64-Pin BGA, S29GL512S11DHIV10

CMOS 3.0 Volt Core with Versatile I/O
65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
Versatile I/O Feature
Wide I/O voltage range (VIO): 1.65 V to VCC
´16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Automatic Error Checking and Correction (ECC)
internal hardware ECC with single bit error correction
Sector Erase
Uniform 128Kb sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range / Grade
Industrial (-40 °C to +85 °C)
Industrial Plus(-40 °C to +105 °C)
100,000 Program / Erase Cycles
20 Years Data Retention
Packaging Options
56pin TSOP
64-ball LAA Fortified BGA, 13 mm ´ 11 mm
64-ball LAE Fortified BGA, 9 mm ´ 9 mm
56-ball VBU Fortified BGA, 9 mm ´ 7 mm