Cypress Semiconductor NOR 128Mbit Quad-SPI Flash Memory 24-Pin BGA, S25FL128SAGBHI200
- RS Stock No.:
- 181-7508
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- S25FL128SAGBHI200
- ผู้ผลิต:
- Cypress Semiconductor
ไม่พร้อมจำหน่าย
RS จะไม่สต็อกสินค้านี้อีกต่อไป
- RS Stock No.:
- 181-7508
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- S25FL128SAGBHI200
- ผู้ผลิต:
- Cypress Semiconductor
คุณสมบัติ / Specifications
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
ค้นหาผลิตภัณฑ์ที่คล้ายกันโดยเลือกคุณลักษณะอย่างน้อยหนึ่งรายการ
เลือกทั้งหมด | คุณลักษณะ | ค่า |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 128Mbit | |
| Interface Type | Quad-SPI | |
| Package Type | BGA | |
| Pin Count | 24 | |
| Organisation | 16M x 8 | |
| Cell Type | NOR | |
| เลือกทั้งหมด | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 128Mbit | ||
Interface Type Quad-SPI | ||
Package Type BGA | ||
Pin Count 24 | ||
Organisation 16M x 8 | ||
Cell Type NOR | ||
The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: MirrorBit technology - that stores two data bits in each memory array transistor Eclipse architecture - that dramatically improves program and erase performance 65 nm process lithography This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
