Z0103MN,135 1A, 600V, TRIAC, Gate Trigger 1.3V 5mA, 4-pin, Surface Mount, SOT-223 (SC-73) WeEn Semiconductors Co., Ltd

  • RS Stock No. 727-1133
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. Z0103MN,135
  • ผู้ผลิต / Manufacturer WeEn Semiconductors Co., Ltd
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
รายละเอียดสินค้า / Product Details

TRIAC, WeEn Semiconductors

TRIACs

A range of TRIACs (Triodes for Alternating Current is also known as Bidirectional Thyristors). They are used in AC switching and control applications with current ratings from under 1A to 40A rms. A TRIAC makes a convenient switch for alternating current circuit.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Rated Average On-State Current 1A
Mounting Type Surface Mount
Package Type SOT-223 (SC-73)
Maximum Gate Trigger Current 5mA
Repetitive Peak Reverse Voltage 600V
Surge Current Rating 8.5A
Pin Count 4
Maximum Gate Trigger Voltage 1.3V
Repetitive Peak Forward Blocking Voltage 600V
Maximum Holding Current 7mA
Dimensions 6.7 x 3.7 x 1.7mm
Length 6.7mm
Width 3.7mm
Height 1.7mm
Repetitive Peak Off-State Current 0.5mA
Maximum Operating Temperature +125 °C
Peak On-State Voltage 1.6V
340 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each: (In a Pack of 20)
THB 10.408
(exc. VAT)
THB 11.137
(inc. VAT)
Units
Per unit
Per Pack*
20 - 20
THB10.408
THB208.16
40 - 80
THB10.40
THB208.00
100 - 180
THB8.157
THB163.14
200 - 380
THB8.074
THB161.48
400 +
THB8.063
THB161.26
*ตัวบ่งบอกราคา / price indicative
ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Vishay’s high-efficiency IGBT modules come with a choice ...
Description:
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device ...
Power MOSFET -20V -4.4A 65 mOhm Single P-Channel ...
Description:
Power MOSFET -20V -4.4A 65 mOhm Single P-Channel TSOP-6. Ultra Low RDS(on)Higher Efficiency Extending Battery LifeMiniature TSOP6 Surface Mount PackageApplications Power Management in Portable and Battery-Powered ProductsEnd ProductsCellular and Cordless TelephonesPCMCIA Cards.