- RS Stock No.:
- 923-0711
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0040120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
210 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB1,779.69
(exc. VAT)
THB1,904.27
(inc. VAT)
Units | Per unit |
1 - 7 | THB1,779.69 |
8 - 14 | THB1,735.20 |
15 + | THB1,708.50 |
- RS Stock No.:
- 923-0711
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0040120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 52 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 330 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -5 V, +20 V |
Length | 16.13mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Typical Gate Charge @ Vgs | 115 nC @ 20 V, 115 nC @ 5 V |
Width | 5.21mm |
Minimum Operating Temperature | -55 °C |
Height | 21.1mm |
Forward Diode Voltage | 3.3V |