N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P
- RS Stock No.:
- 920-0735
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN140N20P
- ผู้ผลิต / Manufacturer:
- IXYS
320 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 10)
THB908.484
(exc. VAT)
THB972.078
(inc. VAT)
| Units | Per unit | Per Tube* |
| 10 - 10 | THB908.484 | THB9,084.84 |
| 20 - 30 | THB881.23 | THB8,812.30 |
| 40 + | THB854.793 | THB8,547.93 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 920-0735
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN140N20P
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 18 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 680 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 25.42mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 38.23mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |