- RS Stock No.:
- 916-3891
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS050M12CM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 916-3891
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CCS050M12CM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 87 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | Six Pack |
Mounting Type | Screw Mount |
Pin Count | 28 |
Maximum Drain Source Resistance | 63 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.3V |
Maximum Power Dissipation | 312 W |
Transistor Configuration | 3 Phase |
Maximum Gate Source Voltage | -10 V, +25 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 6 |
Transistor Material | SiC |
Width | 47mm |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Length | 108mm |
Height | 17mm |
Forward Diode Voltage | 2.3V |