Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
- RS Stock No.:
- 916-3872
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CAS300M12BM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 22/07/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB33,319.77
(exc. VAT)
THB35,652.15
(inc. VAT)
| Units | Per unit |
| 1 - 2 | THB33,319.77 |
| 3 - 4 | THB32,486.78 |
| 5 + | THB31,986.98 |
- RS Stock No.:
- 916-3872
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CAS300M12BM2
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 404 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | Half Bridge |
| Mounting Type | Screw Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 9.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 1.66 kW |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Width | 61.4mm |
| Transistor Material | SiC |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 1025 nC @ 20 V, 1025 nC @ 5 V |
| Length | 106.4mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 2.5V |
| Height | 30mm |