N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT
- RS Stock No.:
- 900-9857
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CSD19536KTTT
- ผู้ผลิต / Manufacturer:
- Texas Instruments
536 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB218.77
(exc. VAT)
THB234.08
(inc. VAT)
| Units | Per unit |
| 1 - 12 | THB218.77 |
| 13 - 24 | THB213.30 |
| 25 + | THB210.02 |
- RS Stock No.:
- 900-9857
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- CSD19536KTTT
- ผู้ผลิต / Manufacturer:
- Texas Instruments
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 272 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK (TO-263) |
| Series | NexFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 118 nC @ 0 V |
| Width | 9.65mm |
| Transistor Material | Si |
| Length | 10.67mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 4.83mm |
| Forward Diode Voltage | 1.1V |