N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2
- RS Stock No.:
- 875-2500
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- MMIX1T550N055T2
- ผู้ผลิต / Manufacturer:
- IXYS
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 15/11/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB1,695.87
(exc. VAT)
THB1,814.58
(inc. VAT)
| Units | Per unit |
| 1 - 4 | THB1,695.87 |
| 5 - 9 | THB1,653.48 |
| 10 + | THB1,628.04 |
- RS Stock No.:
- 875-2500
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- MMIX1T550N055T2
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 550 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 25.25mm |
| Transistor Material | Si |
| Width | 23.25mm |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Height | 5.7mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |