- RS Stock No.:
- 787-9018P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- TP0610K-T1-GE3
- ผู้ผลิต / Manufacturer:
- Vishay
- RS Stock No.:
- 787-9018P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- TP0610K-T1-GE3
- ผู้ผลิต / Manufacturer:
- Vishay
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Halogen-free
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 185 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-23 (TO-236) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 350 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 1.4mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Length | 3.04mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 1.7 nC @ 15 V |
Minimum Operating Temperature | -55 °C |
Height | 1.02mm |