N-Channel MOSFET, 99 A, 650 V TO247-4L onsemi NTH4L025N065SC1
- RS Stock No.:
- 254-7670P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NTH4L025N065SC1
- ผู้ผลิต / Manufacturer:
- onsemi
450 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (Supplied in a Tube)
THB694.18
(exc. VAT)
THB742.77
(inc. VAT)
| Units | Per unit |
| 10 - 99 | THB694.18 |
| 100 - 249 | THB663.04 |
| 250 - 349 | THB592.70 |
| 350 + | THB580.78 |
- RS Stock No.:
- 254-7670P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NTH4L025N065SC1
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance
Ultra low gate charge
High speed switching and low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 99 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO247-4L |
| Mounting Type | Through Hole |